2SB1154

Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm s Features q q q q 16.2±0.5 12.5 3.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 21.0±0.5 15.0±0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –130 –80 –7 –20 –10 70 3 150 –55 to +150 Unit V V V 0.7 15.0±0.3 11.0±0.2 5.0±0.2 3.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 A A W ˚C ˚C 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2* hFE3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT ton tstg tf Conditions VCB = –100V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –3A VCE = –2V, IC = –6A IC = –6A, IB = – 0.3A IC = –10A, IB = –1A IC = –6A, IB = – 0.3A IC = –10A, IB = –1A VCE = –10V, IC = – 0.5A, f = 10MHz IC = –6A, IB1 = – 0.6A, IB2 = 0.6A, VCC = –50V 30 0.5 1.0 0.2 –80 45 90 30 – 0.5 –1.5 –1.5 –2.5 V V V V...