Power Transistors
2SB1172, 2SB1172A
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementa...
Power
Transistors
2SB1172, 2SB1172A
Silicon
PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SD1742, 2SD742A ■ Features
High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment
7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2
Unit: mm
0˚ to 0.15˚
2.5±0.2
12.6±0.3 7.2±0.3
1.1±0.1
Parameter Collector-base voltage (Emitter open) 2SB1172 2SB1172A
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C
Rating −60 −80 −60 −80 −5 −3 −5 15 1.3 150 −55 to +150
Unit V
1.0±0.2
0.75±0.1 0.4±0.1 2.3±0.2 4.6±0.4
0.9±0.1 0˚ to 0.15˚
Collector-emitter voltage 2SB1172 (Base open) 2SB1172A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation
V
1
2
3
V A A W °C °C
1: Base 2: Collector 3: Emitter I-G1 Package
Note) Self-supported type package is also prepared.
Junction temperature Storage temperature
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Emitter open) 2SB1172 2SB1172A 2SB1172 2SB1172A IEBO hFE1
*
Symbol 2SB1172 2SB1172A VBE ICES ICEO VCEO
Conditions IC = −30 mA, IB = 0 VCE = −4 V, IC = −3 A VCE = −60 V, VBE = 0 VCE = −80 V, VBE = 0 VCE = −30 V, IB = 0 VCE = −60 ...