Document
Power Transistors
2SB1176
Silicon PNP epitaxial planar type
For voltage switching Complementary to 2SD1746 ■ Features
• Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment
12.6±0.3 7.2±0.3 (1.0) (1.0)
Unit: mm
7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2
0˚ to 0.15˚
2.5±0.2
1.1±0.1
1.0±0.2
0.75±0.1 0.4±0.1 2.3±0.2 4.6±0.4
0.9±0.1 0˚ to 0.15˚
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −130 −80 −7 −5 −10 15 1.3 150 −55 to +150 °C °C Unit V V V A A W
1
2
3
1: Base 2: Collector 3: Emitter I-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 * Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf Conditions IC = −10 mA, IB = 0 VCB = −100 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC = − 0.1 A VCE = −2 V, IC = −2 A IC = −4 A, IB = − 0.2 A IC = −4 A, IB = − 0.2 A VCE = −10 V, IC = − 0.5 A, f = 10 MHz IC = −2 A, IB1 = − 0.2 A, IB2 = 0.2 A VCC = −50 V 30 0.13 0.5 0.13 45 90 260 − 0.5 −1.5 V V MHz µs µs µs Min −80 −10 −50 Typ Max Unit V µA µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 Q 90 to 180 P 130 to 260
2.5±0.2
Publication date: March 2003
SJD00052AED
1
2SB1176
PC Ta
20 −8
(1)TC=Ta (2)Without heat sink (PC=1.3W)
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
−100
−7
IB=–120mA TC=25˚C
VCE(sat) IC
IC/IB=20
Collector power dissipation PC (W)
–100mA
Collector current IC (A)
15
−6 −5 −4 −3
–80mA –60mA –40mA –30mA –20mA
−10
10 (1)
−1
25˚C TC=100˚C –25˚C
5
−2
–10mA
− 0.1
(2) 0 0 40 80 120 160
−1
–3mA
0
0
−2
−4
−6
−8
−10
− 0.01 − 0.01
− 0.1
−1
−10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
−100
IC/IB=20
hFE IC
104
VCE=–2V
fT I C
104
VCE=–10V f=10MHz TC=25˚C
Base-emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
−10
103
TC=100˚C 25˚C
Transition frequency fT (MHz)
−10
103
25˚C
−1
TC=–25˚C 100˚C
102
–25˚C
102
− 0.1
10
10
− 0.01 − 0.01
− 0.1
−1
−10
1 − 0.01
− 0.1
−1
1 − 0.01
− 0.1
−1
−10
Collector current IC (A)
Collector current IC (A)
C.