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2SB1176 Dataheets PDF



Part Number 2SB1176
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description PNP Transistor
Datasheet 2SB1176 Datasheet2SB1176 Datasheet (PDF)

Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 12.6±0.3 7.2±0.3 (1.0) (1.0) Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 2.5±0.2 1.1±0.1 1.0±0.2.

  2SB1176   2SB1176



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Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 12.6±0.3 7.2±0.3 (1.0) (1.0) Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 2.5±0.2 1.1±0.1 1.0±0.2 0.75±0.1 0.4±0.1 2.3±0.2 4.6±0.4 0.9±0.1 0˚ to 0.15˚ ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −130 −80 −7 −5 −10 15 1.3 150 −55 to +150 °C °C Unit V V V A A W 1 2 3 1: Base 2: Collector 3: Emitter I-G1 Package Note) Self-supported type package is also prepared. ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 * Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf Conditions IC = −10 mA, IB = 0 VCB = −100 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC = − 0.1 A VCE = −2 V, IC = −2 A IC = −4 A, IB = − 0.2 A IC = −4 A, IB = − 0.2 A VCE = −10 V, IC = − 0.5 A, f = 10 MHz IC = −2 A, IB1 = − 0.2 A, IB2 = 0.2 A VCC = −50 V 30 0.13 0.5 0.13 45 90 260 − 0.5 −1.5 V V MHz µs µs µs Min −80 −10 −50 Typ Max Unit V µA µA  Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 Q 90 to 180 P 130 to 260 2.5±0.2 Publication date: March 2003 SJD00052AED 1 2SB1176 PC  Ta 20 −8 (1)TC=Ta (2)Without heat sink (PC=1.3W) IC  VCE Collector-emitter saturation voltage VCE(sat) (V) −100 −7 IB=–120mA TC=25˚C VCE(sat)  IC IC/IB=20 Collector power dissipation PC (W) –100mA Collector current IC (A) 15 −6 −5 −4 −3 –80mA –60mA –40mA –30mA –20mA −10 10 (1) −1 25˚C TC=100˚C –25˚C 5 −2 –10mA − 0.1 (2) 0 0 40 80 120 160 −1 –3mA 0 0 −2 −4 −6 −8 −10 − 0.01 − 0.01 − 0.1 −1 −10 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (A) VBE(sat)  IC −100 IC/IB=20 hFE  IC 104 VCE=–2V fT  I C 104 VCE=–10V f=10MHz TC=25˚C Base-emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE −10 103 TC=100˚C 25˚C Transition frequency fT (MHz) −10 103 25˚C −1 TC=–25˚C 100˚C 102 –25˚C 102 − 0.1 10 10 − 0.01 − 0.01 − 0.1 −1 −10 1 − 0.01 − 0.1 −1 1 − 0.01 − 0.1 −1 −10 Collector current IC (A) Collector current IC (A) C.


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