5.5+−00..31 1.5±0.3 0.9 1.5
2.5 9.5±0.5
Medium power transistor (32V, 2A)
2SB1188 / 2SB1182 / 2SB1240
Features 1) L...
5.5+−00..31 1.5±0.3 0.9 1.5
2.5 9.5±0.5
Medium power
transistor (32V, 2A)
2SB1188 / 2SB1182 / 2SB1240
Features 1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862.
Dimensions (Unit : mm)
2SB1188
4.5+−00..21 1.6±0.1
1.5−+00..12
2SB1182
6.5±0.2 5.1+−00..21
C0.5
2.3+−00..21 0.5±0.1
0.5±0.1
4.0±0.3 2.5−+00..12
Structure Epitaxial planar type
PNP silicon
transistor
1.0±0.2
(1) (2) (3)
0.4±0.1 1.5±0.1
0.5±0.1 3.0±0.2
0.4±0.1 1.5±0.1
0.4−+00..015
ROHM : MPT3 EIAJ : SC-62
(1) Base (2) Collector (3) Emitter
∗Abbreviated symbol: BC
2SB1240
6.8±0.2
2.5±0.2
0.75 0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1 1.0±0.2
(1) (2) (3)
ROHM : CPT3 EIAJ : SC-63
(1) Base (2) Collector (3) Emitter
4.4±0.2
1.0 0.9
0.65Max.
14.5±0.5
0.5±0.1 (1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
∗ Denotes hFE
(1) Emitter (2) Collector (3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
−40
Collector-emitter voltage
VCEO
−32
Emitter-base voltage
VEBO
−5
Collector current
−2 IC
−3
2SB1188
Collector power
dissipation
2SB1182
2SB1240
0.5
2 PC
10
1
Junction temperature
Tj 150
Storage temperature
Tstg
−55 to 150
∗1 Single pulse, Pw=100ms ∗2 When mounted on a 40×40×0.7 mm ceramic board. ∗3 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
Unit
V
V
V
A(DC)
A (Pulse)∗1
W
W ∗2
W (Tc=25°C)
W ∗3
°C °C
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