Power MOSFET
PD - 96231
IRLB8748PbF
Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck
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Description
PD - 96231
IRLB8748PbF
Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power l High Frequency Isolated DC-DC
Converters with Synchronous Rectification for Telecom and Industrial use
Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
and Current l Lead-Free
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max Qg
4.8m:
15nC
D
G Gate
DS G
TO-220AB IRLB8748PbF
D Drain
S Source
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TC = 100°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current hMaximum Power Dissipation hMaximum Power Dissipation
Linear Derating Factor
TJ TSTG
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC RθCS RθJA
hJunction-to-Case
Parameter
Case-to-Sink, Flat Greased Surface
gJunction-to-Ambient
Max. 30 ± 20
92f
65 78 370 75 38 0.5 -55 to + 175
300 (1.6mm from case)
y y10 lbf in (1.1N m)
Units V
A
W W/°C
°C
Typ. ––– 0.5 –––
Max. 2.0 ––– 62
Units °C/W
Notes through are on page 9 www.irf.com
1
04/22/09
IRLB8748PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ....
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