TC2997G

www.DataSheet4U.net TC2997G PRE2_20071107 Preliminary 3.5 GHz 16 W Flange Ceramic Packaged GaAs Power FETs FEATURES  16 W Typical Power at 3.5 GHz  9 dB Typical Linear Power Gain at 3.5 GHz  High Linearity: IP3 = 52 dBm Typical  High Power Added Efficiency: Nominal PAE of 37 %  100 % DC and RF Tested  Flange Ceramic Package  Suitable for WiMax and WLL applications PHOTO ENLARGEMENT DESCRIPTION The TC2997G is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercial applications. ELECTRICAL SPECIFICATIONS Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Output Power at 1dB Gain Compression Point, Vd = 10V, Id = 4A, f=3.4 – 3.6GHz Linear Power Gain Vd = 10V, Id = 4A, f=3.4 – 3.6GHz Intercept Point of the 3 -order Intermodulation, Vd = 10V, Id = 4A, f=3.4 – 3.6GHz, *PSCL = 32 dBm rd MIN 41.5 8 TYP 42.5 9 52 37 18.75 13500 -1.7 MAX UNIT dBm dB dBm % A mS Volts Volts C/W Power Added Efficiency at 1dB Compression Power Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 60 mA Drain-Gate Breakdown Voltage at IDGO =15 mA Thermal Resistance 20 22 0.6 *PSCL: Output Power of Single Carrier Level, delta frequency=5MHz. ABSOLUTE ...