TC2998F

www.DataSheet4U.net - Preliminary Datasheet - TC2998F PRE.3_01/21/2008 2.7-2.9GHz 20W Packaged GaAs Power FETs FEATURES      20 W Typical Power 10 dB Typical Linear Power Gain High Linearity: IP3 = 52 dBm Typical High Power Added Efficiency: Nominal PAE of 37 % 100 % DC and RF Tested DESCRIPTION The TC2998F is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor. The ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercial applications. ELECTRICAL SPECIFICATIONS Symbol FREQ P1dB GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Operating Frequency Output Power at 1dB Gain Compression Point, Vd = 10V, Id = 4.5A, f=2.7 – 2.9GHz Linear Power Gain Vd = 10V, Id = 4.5A, f=2.7 – 2.9GHz Intercept Point of the 3 -order Intermodulation, Vd = 10V, Id = 4.5A, f=2.7 – 2.9GHz, *PSCL = 31 dBm rd MIN 2.7 42 9 TYP MAX 2.9 UNIT GHz dBm dB dBm % A mS Volts Volts C/W 43 10 52 37 18.75 13500 -1.7 22 0.6 Power Added Efficiency at 1dB Compression Power Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 60 mA Drain-Gate Breakdown Voltage at IDGO =15 mA Thermal Resistance 20 * PSCL: Output Power of Single Carrier Level, delta frequency=5MHz. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hs...