2SB1220

Transistor 2SB1220 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD1821 2.1±0.1 Unit: mm q q q High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.425 1.25±0.1 0.425 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.9±0.1 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg –150 –150 –5 –100 –50 150 150 –55 ~ +150 V V V mA mA mW ˚C ˚C 0.7±0.1 0 to 0.1 0.2±0.1 1:Base 2:Emitter 3:Collector EIAJ:SC–70 S-Mini Type Package Marking symbol : I s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage (Ta=25˚C) Symbol ICBO VCEO VEBO hFE* VCE(sat) fT Cob NV Conditions VCB = –100V, IE = 0 IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –10mA IC = –30mA, IB = –3mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz VCE = –10V, IC = –1mA, GV= 80dB, Rg = 100kΩ, Function = FLAT 200 4 150 –150 –5 130 450 –1 V MHz pF mV min typ max –1 Unit µA V V *h FE Rank classification Rank hFE Marking Symbol R 130 ~ 2...