2SB1221

Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC3941 Unit: mm 5.0±0.2 4.0±0.2 q q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –250 –200 –5 –100 –70 1 150 –55 ~ +150 Unit V V V mA mA W ˚C ˚C 1 2 3 2.54±0.15 1.27 0.45 –0.1 1.27 +0.15 13.5±0.5 0.7±0.1 0.7±0.2 8.0±0.2 s Features 0.45 –0.1 +0.15 2.3±0.2 1:Emitter 2:Collector 3:Base TO–92NL Package s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCEO VEBO hFE fT Cob * Conditions VCB = –12V, IE = 0 IC = –100µA, IB = 0 IE = –1µA, IC = 0 VCE = –10V, IC = –5mA IC = –50mA, IB = –5mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min typ max –2 Unit µA V V –200 –5 60 220 –1.5 50 80 5 10 VCE(sat) V MHz pF *h FE Rank classification Q 60 ~ 150 R 100 ~ 220 hFE Rank 1 Transistor PC — Ta 1.2 –120 Ta=25˚C IB=–2mA –1.8mA –1.6mA –1.4mA –1.2mA –1.0mA – 0.8mA – 0.6mA –40 – 0.4mA 2SB1221 IC — VCE –120 VCE=–10V Ta=25˚...