Transistor
2SB1221
Silicon PNP epitaxial planer type
For general amplification Complementary to 2SC3941
Unit: mm
5.0±0....
Transistor
2SB1221
Silicon
PNP epitaxial planer type
For general amplification Complementary to 2SC3941
Unit: mm
5.0±0.2 4.0±0.2
q q
Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings –250 –200 –5 –100 –70 1 150 –55 ~ +150 Unit V V V mA mA W ˚C ˚C
1 2 3 2.54±0.15 1.27 0.45 –0.1 1.27
+0.15
13.5±0.5
0.7±0.1
0.7±0.2
8.0±0.2
s Features
0.45 –0.1
+0.15
2.3±0.2
1:Emitter 2:Collector 3:Base TO–92NL Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO VCEO VEBO hFE fT Cob
*
Conditions VCB = –12V, IE = 0 IC = –100µA, IB = 0 IE = –1µA, IC = 0 VCE = –10V, IC = –5mA IC = –50mA, IB = –5mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz
min
typ
max –2
Unit µA V V
–200 –5 60 220 –1.5 50 80 5 10
VCE(sat)
V MHz pF
*h
FE
Rank classification
Q 60 ~ 150 R 100 ~ 220 hFE
Rank
1
Transistor
PC — Ta
1.2 –120 Ta=25˚C IB=–2mA –1.8mA –1.6mA –1.4mA –1.2mA –1.0mA – 0.8mA – 0.6mA –40 – 0.4mA
2SB1221
IC — VCE
–120 VCE=–10V Ta=25˚...