DatasheetsPDF.com

H5MS1G22MFP

Hynix Semiconductor

1Gbit MOBILE DDR SDRAM

www.DataSheet4U.net 1Gbit MOBILE DDR SDRAM based on 8M x 4Bank x32 I/O Specification of 1Gb (32Mx32bit) Mobile DDR SDR...


Hynix Semiconductor

H5MS1G22MFP

File Download Download H5MS1G22MFP Datasheet


Description
www.DataSheet4U.net 1Gbit MOBILE DDR SDRAM based on 8M x 4Bank x32 I/O Specification of 1Gb (32Mx32bit) Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 8,388,608 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.2 / Jun. 2008 1 www.DataSheet4U.net Mobile DDR SDRAM 1Gbit (32M x 32bit) H5MS1G22MFP Series / H5MS1G32MFP Series Document Title 1GBit (4Bank x 8M x 32bit) MOBILE DDR SDRAM Revision History Revision No. 0.1 0.2 0.3 0.4 1.0 1.1 1.2 - Initial Draft - Defined IDD6 current spec. - Insert IDD8 Spec. value (see page23) - Modify : IDD5 : 100mA --> 120mA IDD6 (@45oC, Full Bank) : 450uA --> 500uA - Final Version - Modify : IDD6 (@45oC, Full Bank) : 500uA --> 450uA IDD6 (@85oC, One Bank) : 550uA --> 500uA - Insert DDR400 DC/AC Characteristics History Draft Date Sep. 2007 Dec. 2007 Dec. 2007 Jan. 2008 Mar. 2008 May. 2008 Jun. 2008 Remark Preliminary Preliminary Preliminary Preliminary Rev 1.2 / Jun. 2008 2 www.DataSheet4U.net Mobile DDR SDRAM 1Gbit (32M x 32bit) H5MS1G22MFP Series / H5MS1G32MFP Series FEATURES SUMMARY ● Mobile DDR SDRAM - Double data rate architecture: two data transfer per clock cycle ● Mobile DDR SDRAM INTERFACE - x32 bus width - Multiplexed Address (Row address and Column address) ● BURST LENGTH ● SUPPLY VOLTAGE - 1.8V device: VDD and VDDQ = 1.7V to 1.95V ● MEMORY CELL ARRAY - 1Gbit (...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)