2SB1236

Transistors Power Transistor (−120V, −1.5A) 2SB1236 2SB1236 zFeatures 1) High breakdown voltage. (BVCEO = −120V) 2) Low collector output capacitance. (Typ. 30pF at VCB = −10V) 3) High transition frequency. (fT = 50MHz) 4) Complements the 2SD1857. zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO −120 Collector-emitter voltage VCEO −120 Emitter-base voltage VEBO −5 Collector current −1.5 IC −3 Collector power dissipation PC 1 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 ∗1 Single pulse Pw = 100ms ∗2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. Unit V V V A (DC) ∗A (Pulse) 1 W ∗2 °C °C zExternal dimensions (Unit : mm) 6.8 2.5 1.0 0.9 14.5 4.4 0.65Max. 0.5 (1) (2) (3) 2.54 2.54 ROHM : ATV 1.05 0.45 Taping specifications (1) Emitter (2) Collector (3) Base zPackaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SB1236 ATV QR TV2 2500 zElectrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗Measured using pulse current. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −120 −120 −5 − − − 120 − − Typ. − − − − − − − 50 30 Max. − − − −1 −1 −2 390 − − Unit V V V µA µA V − MHz pF Condi...