Document
Power Transistor (160V, 1.5A)
2SB1275 / 2SB1236A
Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance.
(Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A.
Absolute maximum ratings (Ta = 25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Collector 2SB1275 power dissipation 2SB1236A Junction temperature
Symbol VCBO VCEO VEBO IC
PC
Tj
Limits −160 −160
−5 −1.5 −3
1 10 1
150
Storage temperature
Tstg −55 to +150
∗ 1 Single pulse Pw=100ms ∗ 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
Unit V V V
A(DC) A(Pulse)
∗1
W(Tc=25°C)
W ∗2 °C °C
Packaging specifications and hFE
Type Package
hFE Code Basic ordering unit (pieces)
2SB1275 CPT3 P TL 2500
2SB1236A ATV D TV2 2500
Dimensions (Unit : mm)
2SB1275
ROHM : CPT3 EIAJ : SC-63
1.0 0.5
(3) (2) (1)
2.3 0.65
2.3 0.9 0.75
5.5 1.5
0.5 2.3 5.1
6.5
0.9
0.8Min.
1.5
2.5
9.5
C0.5
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
2SB1236A
6.8
2.5
1.0 0.9 14.5 4.4
0.65Max.
ROHM : ATV
0.5 (1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
(1) Emitter (2) Collector (3) Base
Electrical characteristics (Ta = 25C)
Parameter Collector-base breakdown voltage
Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current
Emitter cutoff current Collector-emitter saturation voltage
DC current transfer ratio
2SB1275 2SB1236A
Transition frequency
Output capacitance ∗Measured using pulse current.
Symbol BVCBO BVCEO BVEBO
ICBO IEBO VCE(sat)
hFE
fT Cob
Min. −160 −160
−5 − − − 82 100 − −
Typ. − − − − − − − − 50 30
Max. − − − −1 −1 −2
180 200
− −
Unit V V V μA μA V − −
MHz pF
Conditions IC = −50μA IC = −1mA IE = −50μA VCB = −120V VEB = −4V IC/IB = −1A/−0.1A
VCE = −5V , IC = −0.1A
VCE = −5V , IE = 0.1A , f = 30MHz VCB = −10V , IE =0A , f = 1MHz
∗
www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.12 - Rev.B
2SB1275 / 2SB1236A
Electrical characteristics curves
−1.0 Ta=25°C
COLLECTOR CURRENT : IC (A)
−0.8
−10mA −9mA −0.6 −8mA −7mA
−0.4
PC=1W
−6mA −5mA −4mA
−3mA −0.2
−2mA
0
IB= 0mA
−1mA
0
−1 −2
−3 −4
−5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Ground emitter output characteristics
DC CURRENT GAIN : hFE
1000 500
200 Ta=100°C 100 50 −25°C
20 10 5
25°C
VCE= −10V
2
1 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current ( )
TRANSITION FREQUENCY : fT (MHz)
1000 VCE= −5V
500 Ta=25°C
200 100 50
20 10 5
2
1 12
5 10 20 50 100 200 500 1000
EMITTER CURRENT : IE (mA)
Fig.7 Resistance raito vs. emmiter current
COLLECTOR OUTPUT CAPACITANCE: Cob (pF)
COLLECTOR CURRENT : IC (A) Ta=100°C 25°C −25°C
Data Sheet
−10 VCE= −5V
−5
−2 −1 −0.5
−0.2 −0.1 −0.05
−0.02 −0.01
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Ground emitter propagation characteristics
DC CURRENT GAIN : hFE
1000 Ta=25°C
500
200 VCE= −10V
100 50
20 −5V
10 5
2 1 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector current ( )
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
−10 Ta=25°C
−5
−2 −1
−0.5 IC/IB=50
−0.2 −0.1 20
10 −0.05
−0.02 −0.01
−0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation voltage vs. collector current
1000 f=1MHz
500 IE=0A Ta=25°C
200 100 50
20 10 5
2 1 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance vs. collector-base voltage
COLLECTOR CURRENT : IC (A)
−10 IC/IB=10
−5
−2 −1 Ta= −25°C
25°C
−0.5 100°C
−0.2 −0.1 Ta=100°C
−0.05 −25°C
−0.02
VBE(sat)
VCE(sat) 25°C
−0.01 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10
COLLECTOR CURRENT : IC (A)
Fig.6
Collector-emitter saturation voltage Base-emitter saturation voltage
vs.
collector
current
−10 −5 Ic Max. (Pulse∗) −2
Pw=10ms∗
−1 −0.5 100ms∗ −0.2 DC −0.1 −0.05
−0.02
−0.01
−0.005 Ta=25°C ∗ Single
−0.002 NONREPETITIVE −0.001 PULSE
−0.1 −0.2 −0.5 −1 −2 −5 −10
−20 −50 −100 −200 −500 −1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area (2SB1236A)
www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved.
2/3
2009.12 - Rev.B
COLLECTOR CURRENT : IC (A)
2SB1275 / 2SB1236A
−10 −5 Ic Max. (Pulse∗) −2
Pw=10ms∗
−1 −0.5 100ms∗ −0.2 DC −0.