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2SB1236A Dataheets PDF



Part Number 2SB1236A
Manufacturers Rohm
Logo Rohm
Description Power Transistor
Datasheet 2SB1236A Datasheet2SB1236A Datasheet (PDF)

Power Transistor (160V, 1.5A) 2SB1275 / 2SB1236A Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A. Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector 2SB1275 power dissipation 2SB1236A Junction temperature Symbol VCBO VCEO VEBO IC PC Tj Limits −160 −160.

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Power Transistor (160V, 1.5A) 2SB1275 / 2SB1236A Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A. Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector 2SB1275 power dissipation 2SB1236A Junction temperature Symbol VCBO VCEO VEBO IC PC Tj Limits −160 −160 −5 −1.5 −3 1 10 1 150 Storage temperature Tstg −55 to +150 ∗ 1 Single pulse Pw=100ms ∗ 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. Unit V V V A(DC) A(Pulse) ∗1 W(Tc=25°C) W ∗2 °C °C Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SB1275 CPT3 P TL 2500 2SB1236A ATV D TV2 2500 Dimensions (Unit : mm) 2SB1275 ROHM : CPT3 EIAJ : SC-63 1.0 0.5 (3) (2) (1) 2.3 0.65 2.3 0.9 0.75 5.5 1.5 0.5 2.3 5.1 6.5 0.9 0.8Min. 1.5 2.5 9.5 C0.5 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 2SB1236A 6.8 2.5 1.0 0.9 14.5 4.4 0.65Max. ROHM : ATV 0.5 (1) (2) (3) 2.54 2.54 1.05 0.45 Taping specifications (1) Emitter (2) Collector (3) Base Electrical characteristics (Ta = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio 2SB1275 2SB1236A Transition frequency Output capacitance ∗Measured using pulse current. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −160 −160 −5 − − − 82 100 − − Typ. − − − − − − − − 50 30 Max. − − − −1 −1 −2 180 200 − − Unit V V V μA μA V − − MHz pF Conditions IC = −50μA IC = −1mA IE = −50μA VCB = −120V VEB = −4V IC/IB = −1A/−0.1A VCE = −5V , IC = −0.1A VCE = −5V , IE = 0.1A , f = 30MHz VCB = −10V , IE =0A , f = 1MHz ∗ www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.12 - Rev.B 2SB1275 / 2SB1236A Electrical characteristics curves −1.0 Ta=25°C COLLECTOR CURRENT : IC (A) −0.8 −10mA −9mA −0.6 −8mA −7mA −0.4 PC=1W −6mA −5mA −4mA −3mA −0.2 −2mA 0 IB= 0mA −1mA 0 −1 −2 −3 −4 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Ground emitter output characteristics DC CURRENT GAIN : hFE 1000 500 200 Ta=100°C 100 50 −25°C 20 10 5 25°C VCE= −10V 2 1 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ) TRANSITION FREQUENCY : fT (MHz) 1000 VCE= −5V 500 Ta=25°C 200 100 50 20 10 5 2 1 12 5 10 20 50 100 200 500 1000 EMITTER CURRENT : IE (mA) Fig.7 Resistance raito vs. emmiter current COLLECTOR OUTPUT CAPACITANCE: Cob (pF) COLLECTOR CURRENT : IC (A) Ta=100°C 25°C −25°C Data Sheet −10 VCE= −5V −5 −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 BASE TO EMITTER VOLTAGE : VBE (V) Fig.2 Ground emitter propagation characteristics DC CURRENT GAIN : hFE 1000 Ta=25°C 500 200 VCE= −10V 100 50 20 −5V 10 5 2 1 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) Fig.3 DC current gain vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −10 Ta=25°C −5 −2 −1 −0.5 IC/IB=50 −0.2 −0.1 20 10 −0.05 −0.02 −0.01 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage vs. collector current 1000 f=1MHz 500 IE=0A Ta=25°C 200 100 50 20 10 5 2 1 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.8 Collector output capacitance vs. collector-base voltage COLLECTOR CURRENT : IC (A) −10 IC/IB=10 −5 −2 −1 Ta= −25°C 25°C −0.5 100°C −0.2 −0.1 Ta=100°C −0.05 −25°C −0.02 VBE(sat) VCE(sat) 25°C −0.01 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) Fig.6 Collector-emitter saturation voltage Base-emitter saturation voltage vs. collector current −10 −5 Ic Max. (Pulse∗) −2 Pw=10ms∗ −1 −0.5 100ms∗ −0.2 DC −0.1 −0.05 −0.02 −0.01 −0.005 Ta=25°C ∗ Single −0.002 NONREPETITIVE −0.001 PULSE −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area (2SB1236A) www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.12 - Rev.B COLLECTOR CURRENT : IC (A) 2SB1275 / 2SB1236A −10 −5 Ic Max. (Pulse∗) −2 Pw=10ms∗ −1 −0.5 100ms∗ −0.2 DC −0.


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