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HP142TS

SHANTOU HUASHAN ELECTRONIC DEVICES

NPN SILICON TRANSISTOR

www.DataSheet4U.net Shantou Huashan Electronic Devices Co.,Ltd. NPN DARLINGTON TRANSISTOR HP142TS █ APPLICATIONS Hig...


SHANTOU HUASHAN ELECTRONIC DEVICES

HP142TS

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www.DataSheet4U.net Shantou Huashan Electronic Devices Co.,Ltd. NPN DARLINGTON TRANSISTOR HP142TS █ APPLICATIONS High DC Current Gain █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation(Tc=25℃)…………………… 70W VCBO——Collector-Base Voltage…………………………… 100V VCEO——Collector-Emitter Voltage………………………… 100V VEBO —— Emitter-Base Voltage ……………………………… 5V IC——Collector Current(DC)……………………………… 8A IB——Base Current……………………………………………0.5A TO-220 1―Base,B 2―Collector,C 3―Emitter, E █ ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current Emitter-Base Cutoff Current Min Typ Max Unit Test Conditions BVCEO(SUS) ICEO ICBO IEBO HFE(1) HFE(2) VCE(sat1) VCE(sat2) VBE(sat) VBE(on) tD tR tS tF 100 2 1 2 1000 1000 2 3 3.5 3 0.15 0.55 2.5 2.5 V mA mA mA IC=30mA, IB=0 VCE=50V, IB=0 VCB=100V, IE=0 VEB=5V, IC=0 VCE=4V, IC=0.5A VCE=4V, IC=3A DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Base- Emitter On Voltage Deiay time Rise Time Storage Time Fall Time V V V V uS uS uS uS IC=5A, IB=10mA IC=10A, IB=40mA IC=10A, IB=40mA VCE=4V,IC=10A, Vcc=30V,Ic=5A IB1=20mA IB2=-20mA www.DataSheet4U.net Shantou Huashan Electronic Devices Co.,Ltd. NPN DARLINGTON TRANSISTOR HP142TS ...




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