SSM4509GM

www.DataSheet4U.net SSM4509GM N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Low on-resistance Fast switching characteristic D2 D1 D2 D1 D1 D1 D2 N-CH BV DSS R DS(ON) ID G2 G2 S2 G1 S2 S1 G1 S1 30V 14mΩ 10A -30V 20mΩ -8.4A D1 D2 P-CH BVDSS RDS(ON) ID SO-8 Description Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM4509GM is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for applications such as low-voltage motor drives and inverters. G1 G2 S1 S2 Pb-free lead finish (second-level interconnect) Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±20 10 7.9 30 2.0 0.016 -55 to 150 -55 to 150 P-channel -30 ±20 -8.4 -6.7 -30 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit °C/W 3/10/2005 Rev.1.01 www.SiliconStandard.com 1 of 8 www.DataSheet4U.net SSM4509GM N-channel Electrical Characteristics @ T j= 25oC (unless otherwise specified) Symbol BVDSS Parameter D...