N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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SSM4513M/GM
N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement Low on-resista...
Description
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SSM4513M/GM
N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement Low on-resistance
D1 D2 D1
D2
N-CH
BV DSS R DS(ON) ID
35V 36mΩ 5.8A -35V 68mΩ -4.3A
Fast switching performance
SO-8
S1
G1
G2 S2
P-CH BVDSS RDS(ON)
Description
Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G1
ID
D1
D2
G2 S1 S2
The SSM4513M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well-suited for most low voltage applications.
This device is available with Pb-free lead finish (second-level interconnect) as SSM4513GM.
Absolute Maximum Ratings
Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating N-channel 35 ±20 5.8 4.7 20 2.0 0.016 -55 to 150 -55 to 150 P-channel -35 ±20 -4.3 -3.4 -20
Units V V A A A W W/°C °C °C
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit °C/W
10/12/2004 Rev.2.01
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SSM4513M/GM
N-ch Electrical Characteristics @ T j=25 C (unless otherwise specified)
Symbol BVDSS Parameter Drai...
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