P-Channel Enhancement Mode Power MOSFET
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SSM452
Elektronische Bauelemente -6 A, -30V, RDS(ON) 55mΩ P-Channel Enhancement Mode Power MOSFET
R...
Description
www.DataSheet4U.net
SSM452
Elektronische Bauelemente -6 A, -30V, RDS(ON) 55mΩ P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSM452 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
FEATURES
Simple Drive Requirement Lower On-resistance Fast Switching
SOT-223
A M
4
Top View
CB
1 2 3
MARKING
Drain
K
E
L D
F
G
H
J
Gate
REF. A B C D E F
Source
Millimeter Min. Max. 6.20 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.50 4.70 0.60 0.82
REF. G H J K L M
Millimeter Min. Max. 0.10 0.25 0.35 2.30 REF. 2.90 3.10
MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL
Drain – Source Voltage Gate – Source Voltage Continuous Drain Current 3
1
RATING
-30 ±20 -6.0 -4.8 -20 2.7 0.02 -55 ~ 150 45
UNIT
V V A A A W W / °C °C °C / W
VDS VGS TA = 25°C TA = 70°C ID IDM PD TJ, TSTG
Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction & Storage Temperature Range Maximum Junction–Ambient 3
THERMAL DATA
RθJA
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
24-Jun-2010 Rev. A
Page 1 of 4
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SSM452
Elektronische Bauelemente -6 A, -30V, RDS(ON) 55mΩ P-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) PARAMETER
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coef...
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