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SSM4532GM Dataheets PDF



Part Number SSM4532GM
Manufacturers Silicon Standard
Logo Silicon Standard
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet SSM4532GM DatasheetSSM4532GM Datasheet (PDF)

www.DataSheet4U.net SSM4532GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 N-CH BVDSS RDS(ON) ID G2 S2 30V 50mΩ 5A -30V 70mΩ -4A Simple Drive Requirement Low On-resistance Fast Switching D2 D1 D1 P-CH BVDSS RDS(ON) ID SO-8 S1 G1 DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferr.

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www.DataSheet4U.net SSM4532GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 N-CH BVDSS RDS(ON) ID G2 S2 30V 50mΩ 5A -30V 70mΩ -4A Simple Drive Requirement Low On-resistance Fast Switching D2 D1 D1 P-CH BVDSS RDS(ON) ID SO-8 S1 G1 DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. D1 D2 Pb-free; RoHS-compliant G1 S1 G2 S2 ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±20 5 4 20 2.0 0.016 -55 to 150 -55 to 150 P-channel -30 ±20 -4 -3.2 -20 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W 08/17/2007 Rev.1.00 www.SiliconStandard.com 1 www.DataSheet4U.net SSM4532GM N-CH ELECTRICAL CHARACTERISTICS @Tj=25oC (unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. Typ. Max. Units 30 1 0.037 50 70 3 1 25 - V V/℃ mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A VGS=4.5V, ID=4.2A 8 10.2 1.2 3.4 6 9 15 5.5 240 145 55 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) o VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=5A VDS=10V VGS=10V VDS=10V ID=1A RG=6Ω,VGS=10V RD=10Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 ±100 nA Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 SOURCE-DRAIN DIODE Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.2V Tj=25℃, IS=1.7A, VGS=0V Min. Typ. Max. Units 1.7 1.2 A V Forward On Voltage 2 08/17/2007 Rev.1.00 www.SiliconStandard.com 2 www.DataSheet4U.net SSM4532GM P-CH ELECTRICAL CHARACTERISTICS @Tj=25 C (unless otherwise specified) o Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o Test Conditions VGS=0V, ID=250uA 2 Min. Typ. Max. Units -30 -1 -0.028 70 90 -3 -1 -25 - V V/℃ mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A VDS=VGS, ID=-250uA VDS=-10V, ID=-4A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= ± 20V ID=-4A VDS=-10V VGS=-10V VDS=-10V ID=-1A RG=6Ω,VGS=-10V RD=10Ω VGS=0V VDS=-25V f=1.0MHz 5 18.3 3.6 1.5 8 9 21 10 760 345 90 Gate-Source Leakage Total Gate Charge 2 ±100 nA Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 SOURCE-DRAIN DIODE Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=-1.2V Tj=25℃, IS=-1.7A, VGS=0V Min. Typ. Max. Units -1.7 A -1.2 V Forward On Voltage 2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 2 3.Surface mounted on 1 in copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad. 08/17/2007 Rev.1.00 www.SiliconStandard.com 3 www.DataSheet4U.net SSM4532GM N-Channel 70 50 T C =25 C 60 o T C =150 o C 10V 10V 40 50 8.0V ID , Drain Current (A) 30 8.0V ID , Drain Current (A) 40 6.0V 6.0V 20 30 20 4.0V 10 4.0V 10 V GS =3.0V V GS =3.0V 0 0 1 2 3 4 5 6 7 8 9 0 0 1 2 3 4 5 6 7 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 85 1.8 75 I D =5A T C =25 ℃ 1.6 I D =5A V GS =10V RDS(ON) (mΩ ) 65 Normalized RDS(ON) 3 4 5 6 7 8 9 10 11 1.4 1.2 55 1.0 45 0.8 35 0.6 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 08/17/2007 Rev.1.00 www.SiliconStandard.com 4 www.DataSheet4U.net SSM4532GM N-Channel 3 6 5 ID , Drain Current (A) 4 2 3 .


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