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SSM4532GM
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PRODUCT SUMMARY
D2
N-CH BVDSS RDS(ON) ID
G2 S2
30V 50mΩ 5A -30V 70mΩ -4A
Simple Drive Requirement Low On-resistance Fast Switching
D2 D1 D1
P-CH BVDSS RDS(ON) ID
SO-8
S1
G1
DESCRIPTION
The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D1
D2
Pb-free; RoHS-compliant
G1 S1
G2 S2
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating N-channel 30 ±20 5 4 20 2.0 0.016 -55 to 150 -55 to 150 P-channel -30 ±20 -4 -3.2 -20
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
THERMAL DATA
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit ℃/W
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SSM4532GM
N-CH ELECTRICAL CHARACTERISTICS
@Tj=25oC (unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=250uA
Min. Typ. Max. Units 30 1 0.037
50 70 3 1 25 -
V V/℃ mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5A VGS=4.5V, ID=4.2A
8 10.2 1.2 3.4 6 9 15 5.5 240 145 55
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C)
o
VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=5A VDS=10V VGS=10V VDS=10V ID=1A RG=6Ω,VGS=10V RD=10Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
±100 nA
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
SOURCE-DRAIN DIODE
Symbol IS VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=1.2V Tj=25℃, IS=1.7A, VGS=0V
Min. Typ. Max. Units 1.7 1.2 A V
Forward On Voltage
2
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SSM4532GM
P-CH ELECTRICAL CHARACTERISTICS
@Tj=25 C (unless otherwise specified)
o
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C)
o o
Test Conditions VGS=0V, ID=250uA
2
Min. Typ. Max. Units -30 -1 -0.028
70 90 -3 -1 -25 -
V V/℃ mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A VDS=VGS, ID=-250uA VDS=-10V, ID=-4A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= ± 20V ID=-4A VDS=-10V VGS=-10V VDS=-10V ID=-1A RG=6Ω,VGS=-10V RD=10Ω VGS=0V VDS=-25V f=1.0MHz
5 18.3 3.6 1.5 8 9 21 10 760 345 90
Gate-Source Leakage Total Gate Charge
2
±100 nA
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
SOURCE-DRAIN DIODE
Symbol IS VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=-1.2V Tj=25℃, IS=-1.7A, VGS=0V
Min. Typ. Max. Units -1.7 A -1.2 V
Forward On Voltage
2
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%.
2 3.Surface mounted on 1 in copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.
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SSM4532GM
N-Channel
70 50
T C =25 C
60
o
T C =150 o C 10V 10V
40
50
8.0V ID , Drain Current (A)
30
8.0V
ID , Drain Current (A)
40
6.0V
6.0V
20
30
20
4.0V
10
4.0V
10
V GS =3.0V
V GS =3.0V
0 0 1 2 3 4 5 6 7 8 9 0 0 1 2 3 4 5 6 7
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
85
1.8
75
I D =5A T C =25 ℃
1.6
I D =5A V GS =10V
RDS(ON) (mΩ )
65
Normalized RDS(ON)
3 4 5 6 7 8 9 10 11
1.4
1.2
55
1.0
45 0.8
35
0.6 -50 0 50 100 150
V GS (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
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SSM4532GM
N-Channel
3
6
5
ID , Drain Current (A)
4
2
3
.