SSM4575M

www.DataSheet4U.net SSM4575M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Low on-resistance Fast switching performance D2 D1 D1 D2 N-Ch BV DSS 60V 36mΩ 6A -60V 72mΩ -4.2A R DS(ON) G2 S2 ID SO-8 S1 G1 Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is widely preferred for commercial and industrial surface mount applications and is well suited for low-voltage applications such as DC/DC converters. P-Ch BV DSS RDS(ON) ID D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Continuous Drain Current3 Current3 1 Rating N-channel 60 ±20 6 4.7 30 2.0 0.016 -55 to 150 -55 to 150 P-channel -60 ±20 -4.2 -3.3 -30 Units V V A A A W W/°C °C °C Pulsed Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit °C/W Rev.1.01 7/05/2004 www.SiliconStandard.com 1 of 7 www.DataSheet4U.net SSM4575M N-channel Electrical Characteristics @ T j=25oC(unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 60 1 Typ. 0.04 8 18 5 10 10 6 32 10 1...