(TSUS5200 - TSUS5202) Infrared Emitting Diode
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TSUS5200, TSUS5201, TSUS5202
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm...
Description
www.DataSheet4U.net
TSUS5200, TSUS5201, TSUS5202
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
FEATURES
Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Leads with stand-off Peak wavelength: λp = 950 nm High reliability Angle of half intensity: ϕ = ± 15°
94 8390
Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors
DESCRIPTION
TSUS5200 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package.
Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
Infrared remote control and free air transmission systems with low forward voltage and small package requirements Emitter in transmissive sensors Emitter in reflective sensors
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) ± 15 ± 15 ± 15 λP (nm) 950 950 950 tr (ns) 800 800 800 TSUS5200 20 TSUS5201 25 TSUS5202 30 Note Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE TSUS5200 TSUS5201 TSUS5202 Note MOQ: minimum order quantity PACKAGING Bulk Bulk Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ T-1¾ T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temper...
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