Emitting Diode. TSUS5400 Datasheet

TSUS5400 Datasheet PDF, Equivalent


Part Number

TSUS5400

Description

(TSUS5400 - TSUS5402) Infrared Emitting Diode

Manufacture

Vishay Siliconix

Total Page 5 Pages
PDF Download
Download TSUS5400 Datasheet PDF


TSUS5400 Datasheet
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TSUS5400, TSUS5401, TSUS5402
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
94 8390
DESCRIPTION
TSUS5400 is an infrared, 950 nm emitting diode in GaAs
technology molded in a blue-gray tinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
• Infrared remote control and free air transmission systems
with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors
PRODUCT SUMMARY
COMPONENT
TSUS5400
TSUS5401
TSUS5402
Ie (mW/sr)
14
17
20
Note
Test conditions see table “Basic Characteristics”
ϕ (deg)
± 22
± 22
± 22
λP (nm)
950
950
950
ORDERING INFORMATION
ORDERING CODE
TSUS5400
TSUS5401
TSUS5402
Note
MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t 5 s, 2 mm from case
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB
Note
Tamb = 25 °C, unless otherwise specified
SYMBOL
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
tr (ns)
800
800
800
PACKAGE FORM
T-1¾
T-1¾
T-1¾
VALUE
5
150
300
2.5
170
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
www.vishay.com
284
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81056
Rev. 1.6, 05-Sep-08

TSUS5400 Datasheet
www.DataSheet4U.net
TSUS5400, TSUS5401, TSUS5402
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors
950 nm, GaAs
180
160
140
120
100
80 RthJA = 230 K/W
60
40
20
0
0
21313
10 20 30 40 50 60 70 80 90
Tamb - Ambient Temperature (°C)
100
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
120
100
80
60
RthJA = 230 K/W
40
20
0
0
21314
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Temperature coefficient of φe
Angle of half intensity
IF = 100 mA, tp = 20 ms
IF = 100 mA
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
IF = 20 mA
Peak wavelength
Spectral bandwidth
Temperature coefficient of λp
Rise time
Fall time
Virtual source diameter
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 1.5 A
IF = 100 mA
IF = 1.5 A
Note
Tamb = 25 °C, unless otherwise specified
SYMBOL
VF
TKVF
IR
Cj
TKφe
ϕ
λp
Δλ
TKλp
tr
tr
tf
tf
d
MIN.
TYP.
1.3
- 1.3
30
- 0.8
± 22
950
50
0.2
800
400
800
400
2.9
MAX.
1.7
100
UNIT
V
mV/K
µA
pF
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
TYPE DEDICATED CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
IF = 1.5 A, tp = 100 µs
Radiant intensity
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 µs
Radiant power
IF = 100 mA, tp = 20 ms
Note
Tamb = 25 °C, unless otherwise specified
PART
TSUS5400
TSUS5401
TSUS5402
TSUS5400
TSUS5401
TSUS5402
TSUS5400
TSUS5401
TSUS5402
TSUS5400
TSUS5401
TSUS5402
SYMBOL
VF
VF
VF
Ie
Ie
Ie
Ie
Ie
Ie
φe
φe
φe
MIN.
7
10
15
60
85
120
Document Number: 81056
Rev. 1.6, 05-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
TYP.
2.2
2.2
2.2
14
17
20
140
160
190
13
14
15
MAX.
3.4
3.4
2.7
35
35
35
UNIT
V
V
V
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW
mW
mW
www.vishay.com
285


Features Datasheet pdf www.DataSheet4U.net TSUS5400, TSUS5401, TSUS5402 Vishay Semiconductors Infrar ed Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • • • • • • • • • • Package type: le aded Package form: T-1¾ Dimensions (in mm): Ø 5 Leads with stand-off Peak wa velength: λp = 950 nm High reliability Angle of half intensity: ϕ = ± 22° Low forward voltage Suitable for high p ulse current operation Good spectral ma tching with Si photodetectors Lead (Pb) -free component in accordance RoHS 2002 /95/EC and WEEE 2002/96/EC 94 8390 DE SCRIPTION TSUS5400 is an infrared, 950 nm emitting diode in GaAs technology mo lded in a blue-gray tinted plastic pack age. with APPLICATIONS • Infrared r emote control and free air transmission systems with low forward voltage and s mall package requirements • Emitter i n transmissive sensors • Emitter in r eflective sensors PRODUCT SUMMARY COMP ONENT Ie (mW/sr) ϕ (deg) ± 22 ± 22 22 λP (nm) 950 950 950 tr (ns) 800 800 800 TSUS5400 14 TSUS5401 17 TSUS5402 20 Note Test conditions.
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