Power Transistors
2SB1254
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD1894...
Power
Transistors
2SB1254
Silicon
PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD1894
Unit: mm
15.0±0.3 11.0±0.2 5.0±0.2 3.2
s Features
q q q q
16.2±0.5 12.5 3.5 Solder Dip
Optimum for 60W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat): < –2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings –160 –140 –5 –12 –7 70 3 150 –55 to +150 Unit V V V A A W ˚C ˚C
0.7
21.0±0.5 15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1 0.6±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1.1±0.1 5.45±0.3 10.9±0.5 1 2 3
1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a)
Internal Connection
C B
E
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h
(TC=25˚C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = –160V, IE = 0 VCE = –140V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –5V, IC = –1A VCE = –5V, IC = –6A IC = –6A, IB = –6mA IC = –6A, IB = –6mA VCE = –10V,...