2SB1257

Darlington 2SB1257 (2 k Ω)(6 5 0Ω) E B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) Application : Driver for Solenoid, Relay and Motor and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO –60 V VCEO –60 V VEBO –6 V IC –4(Pulse–6) A IB –1 A PC 25(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–60V VEB=–6V IC=–10mA VCE=–4V, IC=–3A IC=–3A, IB=–6mA IC=–3A, IB=–6mA VCE=–12V, IE=0.2A VCB=–10V, f=1MHz sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (mA) –30 10 –3 –10 5 –10 IB2 (mA) 10 ton (µs) 0.4typ (Ta=25°C) Ratings –10max –10max –60min 2000min –1.5max –2max 150typ 75typ Unit µA µA V V V MHz pF tstg (µs) 0.8typ tf (µs) 0.6typ External Dimensions FM20(TO220F) 15.6±0.2 5.5±0.2 3.45 ±0.2 0.8±0.2 5.5 23.0±0.3 9.5±0.2 16.2 ø3.3±0.2 a b 3.0 1.6 3.3 5.45±0.1 1.75 2.15 1.05 +-00..12 5.45±0.1 0.65 +0.2 -0.1 0.8 3.35 1.5 4.4 1.5 Weight : Approx 2.0g a. Part No. B C E b. Lot No. DC Current Gain hFE Collector Current IC(A) IB=–2.3mA I C– V CE Characteristics (Typical) –6 –1.8mA –1.5mA –5 –1.2mA –4 –1.0mA –3 –0.8mA –2 –1 0 0 –1 –2 –3 –4 –5 –6 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) V CE( s a t ) – I B Characteristics (Typical) –3 I C– V BE Tempera...