(3 k Ω)(1 0 0 Ω) E
Darlington
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1258 –100 –...
(3 k Ω)(1 0 0 Ω) E
Darlington
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1258 –100 –100 –6 –6(Pulse–10) –1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
2SB1258
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–100V VEB=–6V IC=–10mA VCE=–2V, IC=–3A IC=–3A, IB=–6mA IC=–3A, IB=–6mA VCE=–12V, IE=0.2A VCB=–10V, f=1MHz 2SB1258 –10max –10max –100min 1000min –1.5max –2max 100typ 100typ V V MHz pF
13.0min
B Equivalent circuit C
Silicon
PNP Epitaxial Planar
Transistor (Complement to type 2SD1785)
Application : Driver for Solenoid, Relay and Motor and General Purpose
(Ta=25°C) Unit
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
µA
V
16.9±0.3 8.4±0.2
µA
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2
sTypical Switching Characteristics (Common Emitter)
VCC (V) –30 RL (Ω) 10 IC (A) –3 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –6 IB2 (mA) 6 ton (µs) 0.6typ tstg (µs) 1.6typ tf (µs) 0.5typ
2.54
3.9 B C E
±0.2
0.8±0.2
a b
ø3.3±0.2
Weight : Approx 2.0g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
–6
A 3.
– 4 2.
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V ) –3
I C – V BE Temperature Characteristics (Typical)
–6 (V C E =–4V)
4m
mA
–2.0
mA
–1 .8 m A
IB
–5 Collector Current I C (A)
=–
–5 Collector Current I C (A)
–1.2 mA
–4
–4
–0.9mA
–3
–2
mp)
–3
)
Temp
(Cas
–2
125˚C
–...