SUU50N03-09P

www.DataSheet4U.net SUU50N03-09P Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A)b 63b 52b rDS(on) (Ω) 0.0095 @ VGS = 10 V 0.014 @ VGS = 4.5 V D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-251 D G and DRAIN-TAB G D S Top View Order Number: SUU50N03-09P SUU50N03-09P—E3 (Lead (Pb)-Free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 0 1 mH TC = 25_C TA = 25_C PD TJ, Tstg Conduction)a TC = 25_C TC = 100_C ID IDM IS IAS EAS Symbol VDS VGS Limit 30 20 63b 44.5b 50 10 35 61 65.2 7.5a --55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t ≤ 10 sec. b. Based on maximum allowable Junction Temperature, package limitation current is 50 A. Document Number: 72420 S-41696—Rev. B, 20-Sep-04 www.vishay.com t ≤ 10 sec Steady State Symbol RthJA RthJC Typical 16 40 1.8 Maximum 20 50 2.3 Unit _C/ C/W 1 www.DataSheet4U.net SUU50N03-09P Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltag...