N-Channel MOSFET
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SUY50N03-10CP
New Product
Vishay Siliconix
N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized
FEAT...
Description
www.DataSheet4U.net
SUY50N03-10CP
New Product
Vishay Siliconix
N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized
FEATURES
D TrenchFETr Power MOSFETS D PWM Optimized for High Efficiency
PRODUCT SUMMARY
V(BR)DSS (V)
30
APPLICATIONS
ID (A)a
15 18
rDS(on) (W)
0.010 @ VGS = 10 V 0.012 @ VGS = 4.5 V
D Buck Converter – High Side – Low Side D Synchronous Rectifier – Secondary Rectifier
D
TO-251
Notes: 1. Drain Connected to Tab G D S 2. Leads Trimmed to 0.092” " 0.003” Top View Order Number: SUY50N03-10CP
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25_C Maximum Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C PD TJ, Tstg TA = 25_C TA = 100_C ID IDM IS
Symbol
VDS VGS
Limit
30
"20 15 14 100 20 71b 8.3a –55 to 175
Unit
V
A
W _C
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case Notes: a Surface mounted on 1” x 1” FR4 Board, t v 10 sec. b See SOA curve for voltage derating. Document Number: 71700 S-05396—Rev. A, 21-Jan-02 www.vishay.com Steady State Steady State RthJA RthJC
Symbol
Typical
15 40 1.75
Maximum
18 50 2.1
Unit
_C/W
1
www.DataSheet4U.net
SUY50N03-10CP
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Volt...
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