2SB1259

Darlington 2SB1259 (3 k Ω)(1 0 0Ω) E B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081) Application : Driver for Solenoid, Relay and Motor and General Purpose sAbsolute maximum ratings Symbol Ratings VCBO –120 VCEO –120 VEBO –6 IC –10(Pulse–15) IB –1 PC 30(Tc=25°C) Tj 150 Tstg –55 to +150 (Ta=25°C) Unit V V V A A W °C °C sElectrical Characteristics Symbol Conditions ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB VCB=–120V VEB=–6V IC=–10mA VCE=–4V, IC=–5A IC=–5A, IB=–10mA IC=–5A, IB=–10mA VCE=–12V, IE=0.2A VCB=–10V, f=1MHz sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (mA) –30 10 –3 –10 5 –6 IB2 (mA) 6 ton (µs) 0.6typ (Ta=25°C) Ratings Unit –10max µA –10max mA –120min V 2000min –1.5max V –2.0max V 100typ MHz 145typ pF tstg (µs) 1.6typ tf (µs) 0.5typ External Dimensions FM20(TO220F) 10.1±0.2 4.2±0.2 2.8 c0.5 4.0±0.2 16.9±0.3 8.4±0.2 ø3.3±0.2 a b 3.9 ±0.2 0.8±0.2 13.0min 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +0.2 -0.1 2.4±0.2 2.2±0.2 Weight : Approx 2.0g BCE a. Part No. b. Lot No. DC Current Gain hFE Collector Current IC(A) –50mA I C– V CE Characteristics (Typical) –15 –20mA –10mA –5mA –3mA –10 –2mA IB=–1mA –5 0 0 –1 –2 –3 –4 –5 –6 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) V CE( s a t ) – I B Characteristics (Typical) –3 I C– V B...