N-Channel MOSFET
www.DataSheet4U.net
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200520 Issued Date : 2005.12.01 Revised Date : ...
Description
www.DataSheet4U.net
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200520 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5
H50N03U
N-Channel Enhancement-Mode MOSFET (25V, 50A)
H50N03U Pin Assignment
Tab
3 2 1
3-Lead Plastic TO-263 Package Code: U Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source
Features
RDS(on)=11mΩ@VGS=10V, ID=30A RDS(on)=18mΩ@VGS=4.5V, ID=30A Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for DC/DC Converters and Motor Drivers Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM
D G S
Internal Schematic Diagram
Maximum Ratings & Thermal Characteristics
(TA=25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current *1 Maximum Power Dissipation @ TC=25oC Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse ID=35A, VDD=20V, L=0.14mH Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance(PCB mounted)*2
*1: Maximum DC current limited by the package. *2: 1-in2 2oz Cu PCB board
Symbol VDS VGS ID IDM PD TJ,Tstg EAS RθJC RθJA
Value 25 ±20 50 200 70 -55 to 150 300 2.1 55
Units V V A A W
o
C
mJ
O O
C/W C/W
Switching Test Circuit
VDD
Switching Waveforms
ton td(on) toff tr td(off) 90% tf 90 %
VIN VGEN RG G
D
VOUT
Output, VOUT
10%
10%
Inverted
90% 50% 50%
S
Input, VIN
10%
Pulse Width
H50N03U
HSMC Product Specifi...
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