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IPD050N03L

Infineon Technologies

MOSFET

IPD050N03LG MOSFET OptiMOSTM3Power-Transistor,30V Features •FastswitchingMOSFETforSMPS •Optimizedtechnology...


Infineon Technologies

IPD050N03L

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Description
IPD050N03LG MOSFET OptiMOSTM3Power-Transistor,30V Features FastswitchingMOSFETforSMPS OptimizedtechnologyforDC/DCconverters QualifiedaccordingtoJEDEC1)fortargetapplications N-channel,logiclevel ExcellentgatechargexRDS(on)product(FOM) Verylowon-resistanceRDS(on) Avalancherated Pb-freeplating;RoHScompliant Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 5 mΩ ID 50 A DPAK tab 2 1 3 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPD050N03L G Package PG-TO252-3 Marking 050N03L RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2020-09-14 OptiMOSTM3Power-Transistor,30V IPD050N03LG TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...




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