IPF050N03L

www.DataSheet4U.net Type IPD050N03L G IPS050N03L G IPF050N03L G IPU050N03L G OptiMOS®3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Avalanche rated Pb-free plating; RoHS compliant Type IPD050N03L G IPF050N03L G 1) Product Summary V DS R DS(on),max ID 30 5 50 V mΩ A IPS050N03L G IPU050N03L G Package Marking PG-TO252-3-11 050N03L PG-TO252-3-23 050N03L PG-TO251-3-11 050N03L PG-TO251-3-21 050N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C Pulsed drain current2) Avalanche current, single pulse 3) Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage 1) Value 50 50 50 50 350 50 60 6 ±20 Unit A I D,pulse I AS E AS dv /dt V GS T C=25 °C T C=25 °C I D=35 A, R GS=25 Ω I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V J-STD20 and JESD22 Rev. 1.02 page 1 2008-04-15 www.DataSheet4U.net IPD050N03L G IPS050N03L G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Symbol Conditions P tot T j, T stg T C=25 °C Value 68 IPF050N03L G IPU050N03L G Unit W °C ...