IPD053N06N3G

www.DataSheet4U.net Type IPD053N06N3 G OptiMOS(TM)3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Type IPD053N06N3 G Product Summary V DS R DS(on),max ID 60 5.3 90 V mΩ A Package Marking PG-TO252-3 053N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C2) V GS=10 V, T C=100 °C Value 90 78 360 68 ±20 Unit A Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage 1) 2) 3) 4) I D,pulse E AS V GS T C=25 °C I D=90 A, R GS=25 Ω mJ V J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=1.3 K/W the chip is able to carry 109 A. See figure 3 for more detailed information See figure 13 for more detailed information Rev.2.0 page 1 2008-11-25 www.DataSheet4U.net IPD053N06N3 G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Symbol Conditions P tot T j, T stg T C=25 °C Value 115 -55 ... 175 55/175/56 Unit W °C Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6...