www.DataSheet4U.net
Type
IPD053N06N3 G
OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching an...
www.DataSheet4U.net
Type
IPD053N06N3 G
OptiMOS(TM)3 Power-
Transistor
Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Type IPD053N06N3 G
Product Summary V DS R DS(on),max ID 60 5.3 90 V mΩ A
Package Marking
PG-TO252-3 053N06N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C2)
V GS=10 V, T C=100 °C
Value 90 78 360 68 ±20
Unit A
Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage
1) 2) 3) 4)
I D,pulse E AS V GS
T C=25 °C I D=90 A, R GS=25 Ω
mJ V
J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=1.3 K/W the chip is able to carry 109 A. See figure 3 for more detailed information See figure 13 for more detailed information
Rev.2.0
page 1
2008-11-25
www.DataSheet4U.net
IPD053N06N3 G
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Symbol Conditions P tot T j, T stg T C=25 °C Value 115 -55 ... 175 55/175/56 Unit W °C
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6...