IPD053N08N3 G
OptiMOS®3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product ...
IPD053N08N3 G
OptiMOS®3 Power-
Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
80 5.3 90
175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
previous engineering sample code: IPD06CN08N
Ideal for high-frequency switching and synchronous rectification
Halogen-free according to IEC61249-2-21
V mW A
Type
IPD053N08N3 G
Package Marking
PG-TO252-3 053N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=90 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
90 90 360 190 ±20 1...
