128M x 8 Bits NAND Flash Memory
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K9T1G08U0M
Document Title
128M x 8 Bits NAND Flash Memory
FLASH MEMORY
Preliminary
Revision Hist...
Description
www.DataSheet4U.net
K9T1G08U0M
Document Title
128M x 8 Bits NAND Flash Memory
FLASH MEMORY
Preliminary
Revision History
Revision No. History
0.0 0.1 0.2 0.3 0.4 0.5
Draft Date
Aug. 7th 2003 Oct. 20th 2003 Mar. 9th 2004 Apr. 24th 2004 May. 24th 2004 Oct. 25th 2004
Remark
Advanced Preliminary Preliminary Preliminary Preliminary Preliminary
Initial issue.
tR is changed. [Old : 12µs(Max.), New :15µs(Max.)] CE must be held low during tR added. 1. Add the Protrusion/Burr value in WSOP1 PKG Diagram. 1. PKG(TSOP1, WSOP1) Dimension Change 1. Technical note is changed 2.Note1 of Program/Erase characteristics is added
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site. http://www.samsung.com/Products/Semiconductor/ The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you.
1
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K9T1G08U0M
FLASH MEMORY
Preliminary
128M x 8 Bits NAND Flash Memory
PRODUCT LIST
Part Number K9T1G08U0M-Y,P K9T1G08U0M-V,F Vcc Range 2.7V ~ 3.6V Organization X8 PKG Type TSOP1 WSOP1
FEATURES
Voltage Supply : 2.7V ~ 3.6V Organization - Memory Cell Array : (128M + 4,096K)bits x 8bits - Data Register : (512 + 16)bits x 8bits Automatic Program and Erase - Page Program...
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