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Transistors with built-in Resistor
UNR32A6
Silicon NPN epitaxial planar transistor
Unit: mm
For digital circuits ■ Features
• Suitable for high-density mounting and downsizing of the equipment • Contribute to low power consumption
0.33+0.05 –0.02 3
0.10+0.05 –0.02
(0.40) (0.40) 0.80±0.05 1.20±0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 80 100 125 −55 to +125 Unit V V mA mW °C °C
5°
0.15 min.
0.23+0.05 –0.02
1
2
0 to 0.01
0.52±0.03
5°
1: Base 2: Emitter 3: Collector SSSMini3-F1 Package
Marking Symbol: HD Internal Connection
R1 (4.7 kΩ) B
C E
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 fT VCB = 10 V, IE = −2 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 kΩ VCC = 5 V, VB = 2.5 V, RL = 1 kΩ −30% 4.7 150 4.9 0.2 +30% 160 Min 50 50 0.1 0.5 0.01 460 0.25 Typ Max Unit V V µA µA mA V V V kΩ MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.15 max.
0.15 min.
0.80±0.05
1.20±0.05
Publication date: December 2002
SJH00064AED
1
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UNR32A6
PT Ta
120
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
90 Ta = 25°C 80 0.9 mA 0.8 mA IB = 1.0 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 10
VCE(sat) IC
IC / IB = 10
Total power dissipation PT (mW)
100
Collector current IC (mA)
70 60 50 40 30 20 10
80
Ta = 85°C 1
60
−25°C 0.1 25°C
40
0.1 mA
20
0
0
20
40
60
80
100 120 140
0
0
2
4
6
8
10
12
0.01
1
10
100
1 000
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
hFE IC
Collector output capacitance C (pF) (Common base, input open circuited) ob
400 Ta = 85°C VCE = 10 V
10
Cob VCB
f = 1 MHz Ta = 25°C
IO VIN
100 VO = 5 V Ta = 25°C
Forward current transfer ratio hFE
Output current IO (mA)
1 0 10 20 30 40
300
25°C
10
−25°C 200
1
100
0
1
10
100
0.1
0
0.5
1.0
1.5
2.0
2.5
Collector current IC (mA)
Collector-base voltage VCB (V)
Input voltage VIN (V)
VIN IO
10 VO = 0.2 V Ta = 25°C
Input voltage VIN (V)
1
0.1
1
10
100
Output current IO (mA)
2
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Request for your special attention and precautions in using the techn.