DatasheetsPDF.com

UNR32A6 Dataheets PDF



Part Number UNR32A6
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description NPN Transistor
Datasheet UNR32A6 DatasheetUNR32A6 Datasheet (PDF)

www.DataSheet4U.net Transistors with built-in Resistor UNR32A6 Silicon NPN epitaxial planar transistor Unit: mm For digital circuits ■ Features • Suitable for high-density mounting and downsizing of the equipment • Contribute to low power consumption 0.33+0.05 –0.02 3 0.10+0.05 –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction .

  UNR32A6   UNR32A6



Document
www.DataSheet4U.net Transistors with built-in Resistor UNR32A6 Silicon NPN epitaxial planar transistor Unit: mm For digital circuits ■ Features • Suitable for high-density mounting and downsizing of the equipment • Contribute to low power consumption 0.33+0.05 –0.02 3 0.10+0.05 –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 80 100 125 −55 to +125 Unit V V mA mW °C °C 5° 0.15 min. 0.23+0.05 –0.02 1 2 0 to 0.01 0.52±0.03 5° 1: Base 2: Emitter 3: Collector SSSMini3-F1 Package Marking Symbol: HD Internal Connection R1 (4.7 kΩ) B C E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 fT VCB = 10 V, IE = −2 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 kΩ VCC = 5 V, VB = 2.5 V, RL = 1 kΩ −30% 4.7 150 4.9 0.2 +30% 160 Min 50 50 0.1 0.5 0.01 460 0.25 Typ Max Unit V V µA µA mA  V V V kΩ MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 0.15 max. 0.15 min. 0.80±0.05 1.20±0.05 Publication date: December 2002 SJH00064AED 1 www.DataSheet4U.net UNR32A6 PT  Ta 120 IC  VCE Collector-emitter saturation voltage VCE(sat) (V) 90 Ta = 25°C 80 0.9 mA 0.8 mA IB = 1.0 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 10 VCE(sat)  IC IC / IB = 10 Total power dissipation PT (mW) 100 Collector current IC (mA) 70 60 50 40 30 20 10 80 Ta = 85°C 1 60 −25°C 0.1 25°C 40 0.1 mA 20 0 0 20 40 60 80 100 120 140 0 0 2 4 6 8 10 12 0.01 1 10 100 1 000 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (mA) hFE  IC Collector output capacitance C (pF) (Common base, input open circuited) ob 400 Ta = 85°C VCE = 10 V 10 Cob  VCB f = 1 MHz Ta = 25°C IO  VIN 100 VO = 5 V Ta = 25°C Forward current transfer ratio hFE Output current IO (mA) 1 0 10 20 30 40 300 25°C 10 −25°C 200 1 100 0 1 10 100 0.1 0 0.5 1.0 1.5 2.0 2.5 Collector current IC (mA) Collector-base voltage VCB (V) Input voltage VIN (V) VIN  IO 10 VO = 0.2 V Ta = 25°C Input voltage VIN (V) 1 0.1 1 10 100 Output current IO (mA) 2 SJH00064AED www.DataSheet4U.net Request for your special attention and precautions in using the techn.


UNR32A5 UNR32A6 UNR32A7


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)