2SB1271

Ordering number:EN2267B PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1271/2SD1907 High-Current Switching Applications Applications · Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Suitable for sets whose height is restricted. · Low collector to emitter saturation voltage. · Large current capacity. Package Dimensions unit:mm 2049B [2SB1271/2SD1907] ( ) : 2SB1271 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage ICBO IEBO hFE1 hFE2 fT VCE(sat) VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)4A VCE=(–)5V, IC=(–)1A IC=(–)4A, IB=(–)0.4A E : Emitter C : Collector B : Base SANYO :TO-220MF Ratings (–)90 (–)80 (–)6 (–)7 (–)12 1.65 40 150 –55 to +150 Unit V V V A A W W ˚C ˚C Ratings min typ 70* 30 20 max (–)0.1 (–)0.1 280* 0.4 (–0.5) Unit mA mA MHz V V * : The 2SB1271/2SD1907 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280 Any and all SANYO products described or contained herein do not ha...