2SB1282

SHINDENGEN Darlington Transistor 2SB1282 (TP4J10) } 4A PNP OUTLINE DIMENSIONS Case : ITO-220 Unit : mm RATINGS œAbsolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage TemperatureTstg -55`+150 Ž Junction TemperatureTj +150 Ž Collector to Base Voltage V -100 V CBO Collector to Emitter Voltage V -100 V CEO Emitter to Base Voltage V -7 V EBO Collector Current DCI -+4 A C Collector Current Peak I -+6 A CP Base Current DC I -0.3 A B Base Current Peak I -0.5 A BP Total Transistor Dissipation P Tc = 25Ž 25 W T Dielectric Strength Vdis Terminals to case AC21 minute kV Mounting Torque TOR (Recommended torque 0.5: 0.3N¥mj N¥m œElectrical Characteristics (Tc=25Ž) Item Symbol Conditions Ratings Unit Collector Cutoff Current V = -100V I Max -0.1 mA CBO CB I = -100V Max -0.1 CE CEO V Emitter Cutoff Current I V = -7V Max -5mA EBO EB DC Current Gain h = -3V, =I -1A Min 1,500 CE C FE V Max 15,000 Collector to Emitter V Saturation (sat)I = -1A Voltage Max -1.5 V C CE Base to Emitter Saturation V (sat)I Voltage = -2mA Max -2.0 V B Thermal Resistance BE ƒÆjc Junction to case Max 5.0 Ž/W Transition Frequency fT V = 10V, = -0.4A I TYP 20 MHz CE C Turn on Time ton Max 1 I = -1A C Storage Time =B2 I = -2mA ts I Max 4 ƒÊs B1 R = 25ƒ¶ L Fall Time tf V = -4V Max 2 BB2 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SB1282 hFE - I C VCE = − 3V 10000 50°C 1000 100°C Tc = 150°C DC Current Gain hFE 100 25°C 0 °C − 25°C − 55°C 10 -0.01 -0.1 -1 -6 Collector Cur...