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PD- 95899A
IRGPS40B120UP
INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT
Features
• Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Super-247 Package. • Lead-Free
C
VCES = 1200V VCE(on) typ. = 3.12V
G E
@ VGE = 15V,
n-channel
Benefits
• Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Significantly Less Snubber Required • Excellent Current Sharing in Parallel Operation.
ICE = 40A, Tj=25°C
Super-247™
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Max.
1200 80 40 160 160 ± 20 595 238 -55 to +150 300 (0.063 in. (1.6mm) from case)
Units
V
A V W
°C
Thermal Resistance
Parameter
RθJC RθCS RθJA Wt Le Junction-to-Case - IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Recommended Clip Force Weight Internal Emitter Inductance (5mm from package)
Min.
––– ––– ––– 20 (2) ––– –––
Typ.
––– 0.24 ––– ––– 6.0 (0.21) 13
Max.
0.20 ––– 40 ––– ––– –––
Units
°C/W
N(kgf) g (oz) nH
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IRGPS40B120UP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
∆V(BR)CES/∆TJ
VCE(on)
VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES
Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 ––– Temperature Coeff. of Breakdown Voltage ––– 0.40 Collector-to-Emitter Saturation Voltage ––– 3.12 ––– 3.39 ––– 3.88 ––– 4.24 Gate Threshold Voltage 4.0 5.0 Temperature Coeff. of Threshold Voltage ––– -12 Forward Transconductance ––– 30.5 Zero Gate Voltage Collector Current ––– ––– ––– 100 Gate-to-Emitter Leakage Current ––– –––
Ref.Fig. Max. Units Conditions ––– V VGE = 0V, IC = 500µA ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-125°C) 5, 6 3.40 IC = 40A VGE = 15V 7, 9 3.71 V IC = 50A 10 4.39 IC = 40A, TJ = 125°C 4.79 IC = 50A, TJ = 125°C 11 8, 9 6.0 VCE = VGE, IC = 250µA ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-125°C) 10 ,11 ––– S VCE = 50V, IC = 40A, PW=80µs 500 µA VGE = 0V, VCE = 1200V 1200 VGE = 0V, VCE = 1200V, TJ = 125°C ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Qge Qgc Eon Eoff Etot Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operting Area Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions 510 IC = 40A 65 nC VCC = 600V 248 VGE = 15V 1750 µJ IC = 40A, VCC = 600V 2050 VGE = 15V,RG = 4.7 Ω, L =200µH 3800 Ls = 150nH TJ = 25°C 2300 TJ = 125°C 2950 µJ Energy losses include "tail" and 5250 diode reverse recovery. 99 IC = 40A, VCC = 600V 55 VGE = 15V, RG = 4.7Ω L =200µH 365 ns Ls = 150nH, T J = 125°C 33 ––– VGE = 0V ––– pF VCC = 30V ––– f = 1.0MHz TJ = 150°C, IC = 160A, Vp =1200V FULL SQUARE VCC = 1000V, VGE = +15V to 0V RG = 4.7Ω TJ = 150°C, Vp =1200V 10 ––– ––– µs VCC = 900V, VGE = +15V to 0V, RG = 4.7Ω Typ. 340 43 165 1400 1650 3050 1950 2200 4150 76 39 332 25 4300 270 160
Ref.Fig.
17 CT1 CT4 WF1 WF2 12,14
13, 15 CT4 WF1 WF2 16
4
SCSOA
Short Circuit Safe Operting Area
CT3 WF4
Note: VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 4.7Ω.
2
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IRGPS40B120UP
100 700 600 80 500
Ptot (W)
60
IC (A)
400 300 200
40
20 100 0 0 20 40 60 80 100 120 140 160 T C (°C) 0 0 50 100 T C (°C) 150 200
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
1000
1000
100
2 µs 10 µs
100
IC (A)
10
100 µs 1ms
IC A)
10 1 10 100 1000 10000
1 DC
10ms
0.1 1 10 100 VCE (V) 1000 10000
VCE (V)
Fig. 3 - Forward SOA TC = 25°C; TJS ≤ 150°C
Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V
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IRGPS40B120UP
120 100 80
ICE (A)
80
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
ICE (A)
70 60 50 40 30 20
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
60 40 20
10
0 0 1 2 3 VCE (V) 4 5
0 0 2 VCE (V) 4 6
Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs
Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs
80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
ICE (A)
500 450 400 350 300 250 200 150 T J = 25°C T J = 125°C
60
ICE (A)
40
20
100 50
TJ = 125°C T J = 25°C 0 5 10 VGE (V) 15 20
0 0 2 VCE (V) 4 6
0
Fig. 7 - Typ..