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P12NM50 Dataheets PDF



Part Number P12NM50
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description STP12NM50
Datasheet P12NM50 DatasheetP12NM50 Datasheet (PDF)

www.DataSheet4U.net STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh™ Power MOSFET General features Type STB12NM50 STB12NM50-1 STP12NM50 STP12NM50FP ■ ■ ■ ■ ■ VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.35Ω <0.35Ω <0.35Ω <0.35Ω ID 12A 12A 12A 12A 3 1 3 1 2 3 1 2 TO-220 TO-220FP High dv/dt and avalanche capabilities Low input capacitance and gate charge 100% avalanche tested Low gate input resistance Tight process control and .

  P12NM50   P12NM50



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www.DataSheet4U.net STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh™ Power MOSFET General features Type STB12NM50 STB12NM50-1 STP12NM50 STP12NM50FP ■ ■ ■ ■ ■ VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.35Ω <0.35Ω <0.35Ω <0.35Ω ID 12A 12A 12A 12A 3 1 3 1 2 3 1 2 TO-220 TO-220FP High dv/dt and avalanche capabilities Low input capacitance and gate charge 100% avalanche tested Low gate input resistance Tight process control and high manufacturing yields D²PAK 3 12 I²PAK Internal schematic diagram Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. Applications ■ Switching application Order codes Part number STB12NM50T4 STB12NM50-1 STP12NM50 STP12NM50FP Marking B12NM50 B12NM50 P12NM50 P12NM50FP Package D²PAK I²PAK TO-220 TO-220FP Packaging Tape & reel Tube Tube Tube July 2006 Rev 11 1/17 www.st.com 17 www.DataSheet4U.net Contents STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 www.DataSheet4U.net STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Electrical ratings 1 Electrical ratings Table 1. Symbol Absolute maximum ratings Value Parameter TO-220/D²PAK/I²PAK ± 30 12 7.5 48 160 1.28 -15 -65 to 150 12 (1) (1) Unit TO-220FP V A A A W W/°C V V/ns °C VGS ID ID IDM(2) PTOT Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating Factor 7.5 48(1) 35 0.28 2500 VISO dv/dt(3) TJ Tstg Insulation winthstand voltage (DC) Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 12A, di/dt ≤ 400A/µs, VDD =80%V(BR)DSS Table 2. Thermal data Value Symbol Parameter TO-220/D²PAK/ I² PAK Unit TO-220FP 3.57 °C/W °C/W °C Rthj-case Rthj-a Tl Thermal resistance junction-case Max Thermal resis.


EN60688 P12NM50 SRF1136


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