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STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1
N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh™ Power MOSFET
General features
Type STB12NM50 STB12NM50-1 STP12NM50 STP12NM50FP
■ ■ ■ ■ ■
VDSS (@Tjmax) 550V 550V 550V 550V
RDS(on) <0.35Ω <0.35Ω <0.35Ω <0.35Ω
ID 12A 12A 12A 12A
3 1
3 1 2
3 1 2
TO-220
TO-220FP
High dv/dt and avalanche capabilities Low input capacitance and gate charge 100% avalanche tested Low gate input resistance Tight process control and high manufacturing yields
D²PAK
3 12
I²PAK
Internal schematic diagram
Description
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
Applications
■
Switching application
Order codes
Part number STB12NM50T4 STB12NM50-1 STP12NM50 STP12NM50FP Marking B12NM50 B12NM50 P12NM50 P12NM50FP Package D²PAK I²PAK TO-220 TO-220FP Packaging Tape & reel Tube Tube Tube
July 2006
Rev 11
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Contents
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5 6
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
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STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Value Parameter TO-220/D²PAK/I²PAK ± 30 12 7.5 48 160 1.28 -15 -65 to 150 12
(1) (1)
Unit TO-220FP V A A A W W/°C V V/ns °C
VGS ID ID IDM(2) PTOT
Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating Factor
7.5
48(1) 35 0.28 2500
VISO dv/dt(3) TJ Tstg
Insulation winthstand voltage (DC) Peak diode recovery voltage slope Operating junction temperature Storage temperature
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 12A, di/dt ≤ 400A/µs, VDD =80%V(BR)DSS
Table 2.
Thermal data
Value
Symbol
Parameter
TO-220/D²PAK/ I² PAK
Unit TO-220FP 3.57 °C/W °C/W °C
Rthj-case Rthj-a Tl
Thermal resistance junction-case Max Thermal resis.