2SB1296

Ordering number:EN2468 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1296/2SD1936 AF Amplifier Applications Applications · AF power amplifier, medium-speed switching, smallsized motor drivers. Features · Large current capacity. · Low collector to emitter saturation voltage. · Wide ASO. Package Dimensions unit:mm 2033 [2SB1296/2SD1936] ( ) : 2SB1296 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO hFE1 VCB=(–)12V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)50mA hFE2 VCE=(–)2V, IC=(–)800mA * : The 2SB1296/2SD1936 are classified by 50mA hFE as follows : 2SB1296 140 S 280 200 T 400 280 U 560 2SB1936 140 S 280 200 T 400 280 U 560 400 V 800 B : Base C : Collector E : Emitter SANYO : SPA Ratings (–)15 (–)15 (–)5 (–)0.8 (–)3 300 150 –55 to +150 Unit V V V A A mW ˚C ˚C Ratings min typ 140* 80 max (–)100 (–)100 (560)* 800* Unit nA nA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications w...