Power Transistors
2SB1299
Silicon PNP epitaxial planar type
For power amplification Complementary to 2SD1273
0.7±0.1 10...
Power
Transistors
2SB1299
Silicon
PNP epitaxial planar type
For power amplification Complementary to 2SD1273
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Unit: mm
4.2±0.2
s Features
q q q
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings –60 –60 –6 –6 –3 –1 40 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C
7.5±0.2
16.7±0.3
φ3.1±0.1
4.0
14.0±0.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg
1.4±0.1
1.3±0.2
Solder Dip
0.8±0.1
0.5 +0.2 –0.1
2.54±0.25 5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency
*h
(TC=25˚C)
Symbol ICBO ICEO IEBO VCEO hFE* VCE(sat) fT Conditions VCB = –60V, IE = 0 VCE = –40V, IB = 0 VEB = –6V, IC = 0 IC = –25mA, IB = 0 VCE = –4V, IC = – 0.5A IC = –2A, IB = – 0.05A VCE = –12V, IC = – 0.2A, f = 10MHz 30 –60 300 700 –1 V MHz min typ max –100 –100 –100 Unit µA µA µA V
FE
Rank classification
Q 300 to 500 P 400 to 700 hFE
Rank
1
Power Tra...