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Transistors
2SD0638 (2SD638)
Silicon NPN epitaxial planar type
For medium-power general amplificat...
www.DataSheet4U.net
Transistors
2SD0638 (2SD638)
Silicon
NPN epitaxial planar type
For medium-power general amplification Complementary to 2SB0643 (2SB643)
(0.4)
(1.5) (1.5)
Unit: mm
6.9±0.1 2.5±0.1 (1.0)
2.0±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
*
1.0±0.1
(0.85)
2.4±0.2
0.45±0.05
VCBO VCEO VEBO IC ICP PC Tj Tstg
30 25 7 0.5 1 600 150 −55 to +150
V V V A A mW °C °C
3 (2.5) 2 (2.5) 1
1.25±0.05
Symbol
Rating
Unit
0.55±0.1
1: Base 2: Collector 3: Emitter M-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Base-emitter saturation voltage Forward current transfer ratio Symbol VCBO VCEO VEBO ICBO ICEO hFE1 * hFE2 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, IB = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 500 mA IC = 300 mA, IB = 30 mA VCB = 10 V, IE = −50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 85 40 90 0.35 200 6 15 0.6 V MHz pF Min 30 25 7 0.1 1 340 Typ Max Unit V...