2SD0662B

www.DataSheet4U.net Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplification 6.9±0.1 2.5±0.1 (1.0) Unit: mm (0.4) (1.5) 2.0±0.2 High collector-emitter voltage (Base open) VCEO High transition frequency fT M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3.5±0.1 (1.0) 2.4±0.2 0.45±0.05 1 ■ Features (1.5) R 0.9 R 0.7 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD0662 2SD0662B VCEO VEBO IC PC Tj Tstg Symbol VCBO Rating 250 400 200 400 5 70 600 150 −55 to +150 V mA mW °C °C V Unit V 1.0±0.1 (0.85) Collector-emitter voltage 2SD0662 (Base open) 2SD0662B Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature 3 (2.5) 2 (2.5) 1.25±0.05 0.55±0.1 1: Base 2: Collector 3: Emitter M-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) 2SD0662 2SD0662B VEBO ICEO hFE * VCE(sat) fT Cob IE = 10 µA, IC = 0 VCE = 100 V, IB = 0 VCE = 10 V, IC = 5 mA IC = 50 mA, IB = 5 mA VCB = 10 V, IE = −10 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 50 10 30 Symbol VCEO Conditions IC = 100 µA, IB = 0 Min 200 400 5 2 220 1.2 V µA  V MHz pF Typ Max Unit V Emitter-base voltage (Collector open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-em...