2SD0875

www.DataSheet4U.net Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) ■ Features Large collector power dissipation PC High collector-emitter voltage (Base open) VCEO Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 0.4±0.08 1.5±0.1 3˚ 0.4 max. 2.6±0.1 Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 4.0+0.25 –0.20 2.5±0.1 1.0+0.1 –0.2 3 2 0.5±0.08 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature * 45˚ Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 80 80 5 0.5 1 1 150 −55 to +150 cm2 Unit V V V A A W °C °C 3.0±0.15 1: Base 2: Collector 3: Emitter MiniP3-F1 Package Marking Symbol: X Note) *: Printed circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Symbol VCBO VCEO VEBO ICBO hFE1 * hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector o...