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Transistors
2SD0973A (2SD973A)
Silicon NPN epitaxial planar type
For low-frequency driver amplific...
www.DataSheet4U.net
Transistors
2SD0973A (2SD973A)
Silicon
NPN epitaxial planar type
For low-frequency driver amplification
6.9±0.1
Unit: mm
2.5±0.1 (1.0)
(0.4)
2.0±0.2
Low collector-emitter saturation voltage VCE(sat) M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
(1.5)
3.5±0.1
(1.0) 2.4±0.2
0.45±0.05 1
■ Features
(1.5)
R 0.9 R 0.7
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 5 1 1.5 1 150 −55 to +150 cm2 Unit V V V A A W °C °C
1.0±0.1
(0.85)
3 (2.5)
2 (2.5)
1.25±0.05
0.55±0.1
1: Base 2: Collector 3: Emitter M-A1 Package
Note) *: Printed circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Collector-emitter saturation voltage *1 Base-emitter saturation voltage *1 Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO hFE1 *2 hFE2 VCE(sat) VBE(sat) fT...