2SD973A

www.DataSheet4U.net Transistors 2SD0973A (2SD973A) Silicon NPN epitaxial planar type For low-frequency driver amplification 6.9±0.1 Unit: mm 2.5±0.1 (1.0) (0.4) 2.0±0.2 Low collector-emitter saturation voltage VCE(sat) M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (1.5) 3.5±0.1 (1.0) 2.4±0.2 0.45±0.05 1 ■ Features (1.5) R 0.9 R 0.7 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 5 1 1.5 1 150 −55 to +150 cm2 Unit V V V A A W °C °C 1.0±0.1 (0.85) 3 (2.5) 2 (2.5) 1.25±0.05 0.55±0.1 1: Base 2: Collector 3: Emitter M-A1 Package Note) *: Printed circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Collector-emitter saturation voltage *1 Base-emitter saturation voltage *1 Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO hFE1 *2 hFE2 VCE(sat) VBE(sat) fT...