Transistors
2SB1320A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD1991A I ...
Transistors
2SB1320A
Silicon
PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD1991A I Features
High forward current transfer ratio hFE Allowing supply with the radial taping
6.9±0.1
0.15
0.7
4.0
1.05 2.5±0.1 (1.45) ±0.05 0.8
0.65 max.
1.0
0.45−0.05
+0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating −60 −50 −7 −200 −100 400 150 −55 to +150 Unit V V V mA mA mW °C °C
1
2
3
0.45−0.05
2.5±0.5
2.5±0.5
+0.1
Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available.
1: Emitter 2: Collector 3: Base MT1 Type Package
1.2±0.1 0.65 max.
0.1 0.45+ − 0.05
2.5±0.1
(HW Type)
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector cutoff current Symbol ICBO ICEO Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio * Collector to emitter saturation voltage Transition frequency Collector output capacitance Note) *: Rank classification Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 No-rank 160 to 460 VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCB = −20 V, IE = 0 VCE = −20 V, IB = 0 IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 IE = −10 µA, IC = 0 VCE = −10 V, IC = −2 mA IC = −100 mA,...
