2SB1351

(2 k Ω)(1 0 0 Ω) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1351 –60 –60 –6 –12(Pulse–20) –1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SB1351 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Condition VCB=–60V VEB=–6V IC=–10mA VCE=–4V, IC=–10A IC=–10A, IB=–20mA IC=–10A, IB=–20mA VCE=–12V, IE=1A VCB=–10V, f=1MHz 2SB1351 –10max –10max –60min 2000min –1.5max –2.0max 130typ 170typ V V MHz pF 13.0min B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose (Ta=25°C) Unit External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 µA V 16.9±0.3 8.4±0.2 mA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) –40 RL (Ω) 4 IC (A) –10 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –20 IB2 (mA) 20 ton (µs) 0.7typ tstg (µs) 1.5typ tf (µs) 0.6typ 2.54 3.9 B C E ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –20 0m V CE ( sat ) – I B Characteristics (Typical) –3 I C – V BE Temperature Characteristics (Typical) –20 (V C E =–4V) –6m A A –1 –4 m A –3 mA Collector Current I C (A) –15 –2m A Collector Current I C (A) –15 –2 emp eT se T ˚C ( 25˚C 125 –5 –5 0 0 –1 –2 –3 –4 –5 –6 0 –0.1 –1 –...