2SB1371

Power Transistors 2SB1371 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 Unit: mm q q q q 16.2±0.5 12.5 3.5 Solder Dip Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –120 –120 –5 –10 –6 70 3 150 –55 to +150 Unit V V V A A W ˚C ˚C 0.7 s Features 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current (TC=25˚C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = –120V, IE = 0 VEB = –3V, IC = 0 VCE = –5V, IC = –20mA VCE = –5V, IC = –1A VCE = –5V, IC = –4A VCE = –5V, IC = –4A IC = –4A, IB = – 0.4A VCE = –5V, IC = – 0.5A, f = 1MHz VCB = –10V, IE = 0, f = 1MHz 15 150 20 60 20 –1.8 –2.0 V V MHz pF 200 min typ max –50 –50 Unit µA µA Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transitio...