Power Transistors
2SB1371
Silicon PNP triple diffusion planar type
For high power amplification Complementary to 2SD206...
Power
Transistors
2SB1371
Silicon
PNP triple diffusion planar type
For high power amplification Complementary to 2SD2064
Unit: mm
q
q q q
16.2±0.5 12.5 3.5 Solder Dip
Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings –120 –120 –5 –10 –6 70 3 150 –55 to +150 Unit V V V A A W ˚C ˚C
0.7
s Features
15.0±0.3 11.0±0.2
5.0±0.2 3.2
21.0±0.5 15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1 0.6±0.2
1.1±0.1 5.45±0.3 10.9±0.5 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current
(TC=25˚C)
Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = –120V, IE = 0 VEB = –3V, IC = 0 VCE = –5V, IC = –20mA VCE = –5V, IC = –1A VCE = –5V, IC = –4A VCE = –5V, IC = –4A IC = –4A, IB = – 0.4A VCE = –5V, IC = – 0.5A, f = 1MHz VCB = –10V, IE = 0, f = 1MHz 15 150 20 60 20 –1.8 –2.0 V V MHz pF 200 min typ max –50 –50 Unit µA µA
Forward current transfer ratio
Base to emitter voltage Collector to emitter saturation voltage Transitio...