2SB1371 Transistor Datasheet

2SB1371 Datasheet PDF, Equivalent


Part Number

2SB1371

Description

Silicon PNP triple diffusion planar type Transistor

Manufacture

Panasonic Semiconductor

Total Page 3 Pages
Datasheet
Download 2SB1371 Datasheet


2SB1371
Power Transistors
2SB1371
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD2064
s Features
q Satisfactory foward current transfer ratio hFE vs. collector cur-
rent IC characteristics
q Wide area of safe operation (ASO)
q High transition frequency fT
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
–120
–120
–5
–10
–6
70
3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
hFE1
hFE2*
hFE3
VBE
VCE(sat)
fT
Cob
VCB = –120V, IE = 0
VEB = –3V, IC = 0
VCE = –5V, IC = –20mA
VCE = –5V, IC = –1A
VCE = –5V, IC = –4A
VCE = –5V, IC = –4A
IC = –4A, IB = – 0.4A
VCE = –5V, IC = – 0.5A, f = 1MHz
VCB = –10V, IE = 0, f = 1MHz
*hFE2 Rank classification
Rank
Q
S
hFE2 60 to 120 80 to 160
P
100 to 200
Unit: mm
15.0±0.3
11.0±0.2
φ3.2±0.1
5.0±0.2
3.2
2.0±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
min typ max Unit
–50 µA
–50 µA
20
60 200
20
–1.8 V
–2.0 V
15 MHz
150 pF
1

2SB1371
Power Transistors
PC — Ta
80
(1) TC=Ta
(2) With a 100 × 100 × 2mm
70 Al heat sink
(3) Without heat sink
60 (PC=3W)
50
(1)
40
30
20
(2)
10
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
–6
TC=25˚C
–5
IB=–120mA
–4 –100mA
–80mA
–3 –60mA
–40mA
–2 –30mA
–20mA
–1 –10mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SB1371
IC — VBE
–6
VCE=–5V
–5
–4
TC=100˚C
–3
–2
25˚C
–1
–25˚C
0
0 –1 –2 –3 –4
Base to emitter voltage VBE (V)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
TC=100˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
1000
hFE — IC
VCE=–5V
300
TC=100˚C
100
25˚C
–25˚C
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
1000
300
100
fT — IC
VCE=–5V
f=1MHz
TC=25˚C
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
10000
3000
1000
Cob — VCB
IE=0
f=1MHz
TC=25˚C
300
100
30
10
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
Area of safe operation (ASO)
–100
–30
–10 ICP
IC
–3
100ms
Non repetitive pulse
TC=25˚C
t=10ms
–1 DC
– 0.3
– 0.1
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V)
2


Features Power Transistors 2SB1371 Silicon PNP t riple diffusion planar type For high po wer amplification Complementary to 2SD2 064 Unit: mm q q q q 16.2±0.5 12.5 3.5 Solder Dip Satisfactory foward cur rent transfer ratio hFE vs. collector c urrent IC characteristics Wide area of safe operation (ASO) High transition fr equency fT Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –120 –120 –5 –10 –6 70 3 150 –55 to +150 Unit V V V A A W ˚C ˚C 0.7 s Featur es 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0 .2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0 .3 10.9±0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base vol tage Collector to emitter voltage Emitt er to base voltage Peak collector curre nt Collector current Collector power TC =25°C dissipation Ta=25°C Junction te mperature Storage temperature Symbol VC BO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) s Electrical Characteristics Parameter Colle.
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