2SB1378

Transistor 2SB1378 Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1996 6.9±0.1 Unit: mm 1.05 2.5±0.1 (1.45) ±0.05 0.8 q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –25 –20 –7 –1 – 0.5 600 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 0.45–0.05 +0.1 1 2 3 0.45–0.05 2.5±0.5 2.5±0.5 +0.1 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 1.2±0.1 0.65 max. 0.1 0.45+ – 0.05 2.5±0.1 (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *1h (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –25V, IE = 0 VCE = –20V, IB = 0 IC = –10µA, IE = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –0.5A*2 VCE = –2V, IC = –1A*2 IC = –500mA, IB = –50mA*2 IC = –500mA, IB = –50mA*2 150 15 *2 min typ max –100 –1 14.5±0.5 0.85 Low collector to emitter saturation voltage VCE(sat). Opti...