2SB1378 Transistor Datasheet

2SB1378 Datasheet PDF, Equivalent


Part Number

2SB1378

Description

Silicon PNP epitaxial planer type Transistor

Manufacture

Panasonic Semiconductor

Total Page 2 Pages
Datasheet
Download 2SB1378 Datasheet


2SB1378
Transistor
2SB1378
Silicon PNP epitaxial planer type
For low-frequency power amplification
Complementary to 2SD1996
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Optimum for low-voltage operation and for converters.
q Allowing supply with the radial taping.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–25
–20
–7
–1
– 0.5
600
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
s Electrical Characteristics (Ta=25˚C)
0.45+–00..015
2.5±0.5 2.5±0.5
123
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT1 Type Package
1.2±0.1
0.45+–00..105
0.65
max.
(HW type)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
ICEO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
*1hFE1 Rank classification
VCB = –25V, IE = 0
–100 nA
VCE = –20V, IB = 0
–1 µA
IC = –10µA, IE = 0
–25
V
IC = –1mA, IB = 0
–20
V
IE = –10µA, IC = 0
–7
V
VCE = –2V, IC = –0.5A*2
90 350
VCE = –2V, IC = –1A*2
25
IC = –500mA, IB = –50mA*2
– 0.4
V
IC = –500mA, IB = –50mA*2
–1.2 V
VCB = –10V, IE = 50mA, f = 200MHz 150 MHz
VCB = –10V, IE = 0, f = 1MHz
15 25 pF
*2 Pulse measurement
Rank
Q
R
S
hFE1 90 ~ 155 130 ~ 220 180 ~ 350
1

2SB1378
Transistor
PC — Ta
800
700
600
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–100
–30
–10
VBE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=–25˚C
75˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
Cob — VCB
80
IE=0
70 f=1MHz
Ta=25˚C
60
50
40
30
20
10
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–1.2
–1.0
– 0.8
– 0.6
– 0.4
– 0.2
IC — VCE
Ta=25˚C
IB=–10mA
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
0
0 –1 –2 –3 –4 –5 –6
Collector to emitter voltage VCE (V)
2SB1378
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=75˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
hFE — IC
600
VCE=–2V
500
400
300 Ta=75˚C
25˚C
200
–25˚C
100
0
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
fT — IE
320
VCB=–10V
Ta=25˚C
280
240
200
160
120
80
40
0
1 3 10 30 100 300 1000
Emitter current IE (mA)
2


Features Transistor 2SB1378 Silicon PNP epitaxia l planer type For low-frequency power a mplification Complementary to 2SD1996 6 .9±0.1 Unit: mm 1.05 2.5±0.1 (1.45) ±0.05 0.8 q q q s Absolute Maximum R atings Parameter Collector to base volt age Collector to emitter voltage Emitte r to base voltage Peak collector curren t Collector current Collector power dis sipation Junction temperature Storage t emperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –25 20 –7 –1 – 0.5 600 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 0.45– 0.05 +0.1 1 2 3 0.45–0.05 2.5± 0.5 2.5±0.5 +0.1 Note: In addition to the lead type shown in the upper fig ure, the type as shown in the lower fig ure is also available. 1:Emitter 2:Col lector 3:Base MT1 Type Package 1.2±0. 1 0.65 max. 0.1 0.45+ – 0.05 2.5±0. 1 (HW type) s Electrical Characterist ics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter.
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