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Ordering number:ENN2069A
PNP Epitaxial Planar Silicon Transist...
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Ordering number:ENN2069A
PNP Epitaxial Planar Silicon
Transistor
2SB1140
20V/5A Switching Applications
Applications
· Strobes, power supplies, relay drivers, lamp drivers.
Package Dimensions
unit:mm 2042B
[2SB1140]
8.0 1.0 4.0 1.0
Features
· Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity. · Short switching time.
1.6 0.8
1.4
3.3
3.0
1.5
3.0
0.8 0.75
7.5
15.5
11.0
0.7
1
2
3
4.8
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg
Tc=25˚C
Conditions
1.7
2.4
1 : Emitter 2 : Collector 3 : Base SANYO : TO-126ML
Ratings –25 –20 –5 –5 –8 –0.5 1.5 10 150 –55 to +150
Unit V V V A A A W W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE1 hFE2 fT VCB=–20V, IE=0 VEB=–4V, IC=0 VCE=–2V, IC=–500mA VCE=–2V, IC=–4A VCE=–5V, IC=–200mA
Rank hFE R 100 to 200 S 140 to 280 T 200 to 400
Conditions
Ratings min typ max –500 –500 100* 60 320 400*
Unit nA nA
MHz
* : The 2SB1140 is classified by 500mA hFE as follows :
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Any and all SANYO products described or contained herein do not have specificat...
